Theory of oscillatory tunneling magnetoresistance

Lee, B. C.
May 2010
Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C708-1
Academic Journal
An analytical form of the oscillatory tunneling magnetoresistance (TMR) is obtained for a magnetic tunnel junction with a single-crystal nonmagnetic layer inserted. The full-band structures are taken into account and the TMR is expressed with spin-dependent reflection amplitudes at the Fermi level and the extremal points. Temperature dependence due to the thermal broadening is included. The phase factor of the reflection amplitude plays an important role in the oscillatory TMR.


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