TITLE

Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas

AUTHOR(S)
Beyer, W.; Hager, R.; Schmidbaur, H.; Winterling, G.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1666
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous (a-) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.
ACCESSION #
9830960

 

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