Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures

Saeta, P.; Federici, J. F.; Fischer, R. J.; Greene, B. I.; Pfeiffer, L.; Spitzer, R. C.; Wilson, B. A.
April 1989
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1681
Academic Journal
We report novel femtosecond time-resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8- and 11-monolayer-thick GaAs samples, respectively.


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