TITLE

Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures

AUTHOR(S)
Saeta, P.; Federici, J. F.; Fischer, R. J.; Greene, B. I.; Pfeiffer, L.; Spitzer, R. C.; Wilson, B. A.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1681
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report novel femtosecond time-resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8- and 11-monolayer-thick GaAs samples, respectively.
ACCESSION #
9830949

 

Related Articles

  • Sensitivity of resonant excitation and photoluminescence excitation measurements to exciton.... Reynolds, D.C.; Evans, K.R. // Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p962 

    Investigates the sensitivity of resonant and photoluminescent excitation measurements to exciton localization effects in gallium arsenide (GaAs)/aluminum GaAs quantum wells. Evidence on effective submonolayer well width fluctuations; Predominance of localized excitons; Information on the free...

  • Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells. Chi-Kuang Sun; Jian-Chin Liang; Stanton, Christopher J.; Abare, Amber; Coldren, Larry; DenBaars, Steven P. // Applied Physics Letters;8/30/1999, Vol. 75 Issue 9, p1249 

    Observes coherent acoustic-phonon oscillation in indium gallium nitride (InGaN)/gallium nitride (GaN) multiple-quantum wells. Screening out of the strained-induced piezoelectric field by photogenerated carriers using femtosecond pulse excitation; Initiation of coherent acoustic-phonon...

  • Intersubband photoluminescence of GaAs quantum wells under selective interband excitation. Sauvage, S.; Boucaud, P. // Applied Physics Letters;9/1/1997, Vol. 71 Issue 9, p1183 

    Examines the infrared spontaneous emission between subbands in gallium arsenide quantum wells excited by interband optical pumping. Composition of the active region; Injection of electrons from the valence band in excited subbands; Effect of E[sub 5] subband selection on the intersubband...

  • Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells. Cilibrizzi, Pasquale; Askitopoulos, Alexis; Silva, Matteo; Bastiman, Faebian; Clarke, Edmund; Zajac, Joanna M.; Langbein, Wolfgang; Lagoudakis, Pavlos G. // Applied Physics Letters;11/10/2014, Vol. 105 Issue 19, p1 

    The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs0 9 8P0 0 2 microcavity with embedded InGaAs quantum wells having a reduced cross-hatch...

  • Single carrier localization in In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] investigated by magnetophotoluminescence. Polimeni, A.; Masia, F.; Vinattieri, A.; Höger von Högersthal, G. Baldassarri; Capizzi, M. // Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2295 

    We investigated the origin of radiative recombination in In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y]/GaAs quantum wells by photoluminescence (PL) after picosecond excitation and under a magnetic field, B. Continuous wave and time-resolved PL show that at low temperature T localized states are mainly...

  • Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells. Yu, J. L.; Chen, Y. H.; Jiang, C. Y.; Liu, Y.; Ma, H. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 5, p053519 

    Spectra of the interband spin photocurrent due to Rashba and Dresselhaus spin splittings have been experimentally investigated in InGaAs/AlGaAs quantum wells at room temperature. The Rashba- and Dresselhaus-induced circular photogalvanic effect (CPGE) spectra are found to be quite similar in the...

  • Electrical excitation of superradiant intersubband plasmons. Laurent, Thibault; Todorov, Yanko; Vasanelli, Angela; Sagnes, Isabelle; Beaudoin, Grégoire; Sirtori, Carlo // Applied Physics Letters;12/14/2015, Vol. 107 Issue 24, p1 

    We present a detailed experimental analysis on mid-infrared superradiant emission from highly doped quantum wells. The emission originates from the radiative decay of intersubband plasmon excitations, which are electrically injected by directly contacting the two-dimensional electron gas. For...

  • Dynamics of Anti-Stokes Photoluminescence by Phonon Heating under Excitation Resonant to Exciton States of GaAs Quantum Well Growth Islands. Fujiwara, Kenzo // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p501 

    The exciton dynamics of anti-Stokes photoluminescence (PL) have been investigated by measuring transient PL spectra under ps pulsed photoexcitation resonant to the ground heavy-hole exciton states in a GaAs single quantum well with growth islands (GIs) as a function of lattice temperature....

  • Optical Spectroscopy Of Quantum Confined States In GaAs/AlGaAs Quantum Well Tubes. Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p516 

    We have investigated the quantum confinement of electronic states in GaAs/AlxGa1-xAs nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics