Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

Ku, Y. H.; Lee, S. K.; Kwong, D. L.; Chu, P.
April 1989
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1684
Academic Journal
Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive-in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO2/TiSi2 interface is identified for the first time in the form of B2O3. p+/n diodes and short-channel metal-oxide-semiconductor field-effect transistors with good electrical characteristics have been fabricated using doped silicide technology.


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