TITLE

Spatially distributed gains in semiconductor lasers

AUTHOR(S)
Le Grand, Y.; Le Floch, A.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1607
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A careful analysis of the gain using the amplified spontaneous emission in semiconductor lasers concludes that there is a spatial distribution of the gain. A twofold distribution is observed in the planes parallel and perpendicular to the junction with different decreasing variations from the laser axis to the edge of the radiation lobe. Collecting the entire emitted light beam gives usually too low gain values. Gain measurements restricted to the region around the laser beam axis lead to an improvement of the gain value determination being within 96% of the actual value determined by the laser threshold.
ACCESSION #
9830930

 

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