TITLE

New high-rate sputtering-type electron cyclotron resonance microwave plasma using an electric mirror

AUTHOR(S)
Matsuoka, Morito; Ono, Ken’ichi
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1645
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-rate sputtering is achieved by means of new electron cyclotron resonance microwave plasma employing sputtering using an electric mirror. This apparatus consists of both planar and cylindrical targets. Microwave power is perpendicularly or obliquely introduced into the resonance chamber. High-density plasma of 1012 cm-3 is generated. The reflected electrons oscillating between the two targets play a major role in generating the dense plasma, i.e., as a beam-plasma interaction. Both insulator and conductor films can be continuously deposited by this sputtering method at high rates under low gas pressures of 10-2 Pa. Al, Mo, and Fe films are deposited at rates above 2000 Ã…/min.
ACCESSION #
9830918

 

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