TITLE

Determination of generation lifetime in intrinsic polycrystalline silicon

AUTHOR(S)
Hurley, P. K.; Taylor, S.; Eccleston, W.; Meakin, D.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1525
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO2 /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the high-frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n-type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.
ACCESSION #
9830879

 

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