TITLE

Indirect trench sidewall doping by implantation of reflected ions

AUTHOR(S)
Fuse, Genshu; Ogawa, Hisashi; Tamura, Kayoko; Naito, Yasushi; Iwasaki, Hiroshi
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1534
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ion implantation (i/i) technology is employed for silicon trench sidewall doping. The aspect ratio of trenches for high Mbit DRAM is very large (depth/width≥10), so that very small glancing-angle i/i to sidewalls is necessary. In this case, reflected ions are large in number and are implanted to the opposite sidewall. It is very important to know the elemental depth profile in the opposite sidewall to understand the implantation mechanism. For the first time, we measured the depth profiles at several positions of the opposite trench sidewall by secondary-ion mass spectroscopy for arsenic and boron ion implantations. It is found that reflected ions are distributed near the facing region of the directly implanted region with smaller energies than the primary energy. These findings are compared with the simulations based on the marlowe program.
ACCESSION #
9830872

 

Related Articles

  • Extrinsic transient diffusion in silicon. Giles, Martin D. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2399 

    Investigates the effect of extrinsic background doping in silicon on the transient enhancement of dopant diffusion for an ion-implanted dopant to gain insight into the role of point defect charge states. Increase in the transient effect for extrinsic background doping; Variations in transient...

  • Proportionality of vacancy concentration to ion implantation fluence. Simpson, P. J.; Szpala, S. // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5852 

    We have used positron annihilation spectroscopy to address the proportionality of vacancy production versus ion fluence in silicon. For implants of Au (energy 11.5 MeV, fluences 2 x 10[SUP9]-3 x 10[SUP11]/cm[SUP2]) and of Ge (energy 8.6 MeV, fluences 5 x 10[SUP9-4] x 10[SUP11] /cm[SUP2]), we...

  • Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron. Tishkovskii, E. G.; Obodnikov, V. I.; Taskin, A. A.; Feklistov, K. V.; Seryapin, V. G. // Semiconductors;Jun2000, Vol. 34 Issue 6, p629 

    The special features of redistribution of phosphorus implanted into silicon wafers with a high concentration of boron (N[sub B] = 2.5 x 10[sup 20] cm[sup -3]) were studied. It is shown that, in silicon initially doped heavily with boron, the broadening of concentration profiles of phosphorus as...

  • Suppression of phosphorus diffusion by carbon co-implantation. Pawlak, B. J.; Duffy, R.; Janssens, T.; Vandervorst, W.; Felch, S. B.; Collart, E. J. H.; Cowern, N. E. B. // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p062102 

    The impact of Si interstitial (Sii) flux suppression on the formation of P junctions by rapid thermal annealing (RTA) is demonstrated. Here we investigate the role of amorphization coupled with C co-implantation on P diffusion and its activation. From experiments on C co-implants in a-Si versus...

  • Variable-dose (10[sup 17]-10[sup 20] cm[sup -3]) phosphorus ion implantation into 4H-SiC. Handy, Evan M.; Rao, Mulpuri V.; Holland, O. W.; Jones, K. A.; Derenge, M. A.; Papanicolaou, N. // Journal of Applied Physics;11/15/2000, Vol. 88 Issue 10 

    Multiple-energy box profile elevated-temperature (700 °C) phosphorus ion implantations were performed into 4H-SiC in the doping range of 1x10[sup 17]-1x10[sup 20] cm[sup -3]. The implanted material was annealed at 1500, 1600, or 1650 °C with an AIN encapsulant to prevent degradation of the...

  • Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions. Antonova, I. V.; Shaĭmeev, S. S.; Smagulova, S. A. // Semiconductors;May2006, Vol. 40 Issue 5, p543 

    Deep-level transient spectroscopy is used to study both the concentration profiles of defects introduced into silicon during the implantation of 14-MeV boron ions and the transformation of these defects as a result of subsequent annealing at temperatures in the range from 200 to 800°C. It is...

  • Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions. Usov, I. O.; Suvorova, A. A.; Kudriavtsev, Y. A.; Suvorov, A. V. // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p4960 

    The diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C...

  • Topographical and structural investigations of phosphorous-doped silicon films. Sorschag, K.; Gold, H.; Lutz, J.; Kuchar, F.; Pippan, M.; Noll, H. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS999 

    Abstract. The influence of two different ex situ doping processes, diffusion doping and ion implantation, on the structure and surface topography of low-pressure chemical vapour deposited silicon films has been studied using atomic force microscopy. The films were grown at temperatures between...

  • Dopant Activation and Defect Analysis of Ultra-Shallow Junctions Made by Gas Cluster Ion Beams. Shao, Yan; Hautala, John; Larson, Larry; Jain, Amitabh // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p411 

    A long-standing problem in the fabrication of junctions by ion implantation is the enhanced diffusion caused by interstitial agglomeration and dissolution on annealing. Another side effect is residual damage that leads to junction leakage. The gas cluster ion beam technique (GCIB) offers a means...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics