Interaction of Be and O in GaAs

Von Neida, A. E.; Pearton, S. J.; Hobson, W. S.; Abernathy, C. R.
April 1989
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1540
Academic Journal
Oxygen implanted at a concentration above that of the acceptors in p-type GaAs is shown to create thermally stable, high-resistivity material only in the case of Be doping in the GaAs. The effect is not seen for Mg, Zn, or Cd doping. Similarly, there is no apparent interaction of O with n-type dopants (S or Si) in our measurements. The Be-O complex in p-type GaAs is a deep donor, creating material whose sheet resistivity shows an apparent thermal activation energy of 0.59 eV for a structure involving a thin layer (5000 Ã…) of oxygen compensated, Be-doped GaAs on a semi-insulating substrate.


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