TITLE

Application of position sensitive atom probe to the study of the microchemistry and morphology of quantum well interfaces

AUTHOR(S)
Liddle, J. A.; Norman, A. G.; Cerezo, A.; Grovenor, C. R. M.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1555
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The morphology and microchemistry of interfaces in GaInAs/InP quantum well structures have been studied with extremely high resolution by the new technique of position sensitive atom probe microanalysis. This letter presents some preliminary results demonstrating the power of the technique in determining the structure and chemistry of individual interfaces in multilayer epitaxial semiconductor samples.
ACCESSION #
9830856

 

Related Articles

  • Does luminescence show semiconductor interfaces to be atomically smooth? Warwick, C. A.; Jan, W. Y.; Ourmazd, A.; Harris, T. D. // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2666 

    Luminescence spectra from quantum wells are routinely interpreted in terms of atomically smooth and atomically abrupt interfaces. Here we show that this interpretation is inconsistent with photoluminescence, photoluminescence excitation, and quantitative microscopic (chemical lattice imaging)...

  • Band structure and confined energy levels of the Si3N4/Si/GaAs system. Chen, Z.; Mohammad, S.N. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p275 

    Calculates the band structure of strained silicon on (001) GaAs, band lineups of the strained Si/(001)GaAs heterojunction, and confined energy levels of the Si3N4/Si/GaAs quantum well. Band structure of coherently strained silicon on (001) GaAs; Band line ups for the strained silicon GaAs...

  • A comparison using a delta-function model of envelope function approximations for quantum wells. Cunningham, Thomas; Barker, R. C.; Chiu, L. C. // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5393 

    Presents a study which compared versions of the effective-mass approximation to the exact atomic wave function in predicting the energies of the bound states in a single quantum well. Details on studies of bound states in thin heterojunction quantum wells; Properties of a delta-function...

  • Electron-hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells. Zachau, M.; Grützmacher, D. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p632 

    We measure the absorption of thin InGaAs/InP quantum wells with a well width between 0 and 20 Ã…. The discretization of the transition energies due to the quantization of the well width by monolayers is clearly observed for both the heavy and light hole excitons. The dependences of the heavy...

  • Quantum well tunnel triode. Kastalsky, A.; Milshtein, M. // Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p398 

    We demonstrate a novel three-terminal device, the tunnel triode, in which the current within the quantum well is a part of the tunnel current through the p+-n+ junction. A tunnel-diode-like negative differential resistance effect with peak-to-valley ratio as high as 20 was observed, the tunnel...

  • Quantum well surface-plasmon oscillator. Palmer, A. Jay // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p537 

    We identify a new type of electromagnetic oscillator which utilizes the negative differential conductivity of a quantum well tunnel junction to drive surface-plasmon oscillations on the outside boundaries of the junction. We calculate the complex propagation constant as a function of frequency...

  • Observation of quantum wire formation at intersecting quantum wells. Goni, A.R.; Pfeiffer, L.N. // Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1956 

    Examines the bound states confined at the junction between two gallium arsenide quantum wells. Fabrication of the junction by cleaved edge overgrowth process; Use of optical emission and absorption spectroscopy to identify bound electron and hole states; Determination of conduction band...

  • Analysis of thermal conditions of pulse operated single quantum well separate confinement heterostructure (SQW SCH) lasers. ORNOCH, LESZEK; KOWALCZYK, EMIL; MROZIEWICZ, BOHDAN // Optica Applicata;2005, Vol. 35 Issue 3, p591 

    Junction temperature affects laser diode performance in many ways. Magnitude of the light output power, a center wavelength of the spectrum and diode reliability are all strongly dependent on the junction temperature. A simple electrical method to measure laser diode junction temperature has...

  • N-p-(p[sup +]-n[sup +])-n Al[sub y]Ga[sub 1-y]As-GaAs-In[sub x]Ga[sub 1-x]As quantum-well laser.... Sugg, A.R.; Chen, E.I.; Richard, T.A.; Maranowski, S.A.; Holonyak Jr., N. // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2510 

    Examines the growth data of n-p (n-up) AlGaAs-GaAs-InGaAs quantum well heterostructure lasers by metalorganic chemical vapor deposition using p[sup +]-n[sup+] GaAs-InGaAs reverse-biased tunnel junction on n-type GaAs substrate. Operation of the lasers at 300 Kelvin; Presence of low...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics