Hole transport through minibands of a symmetrically strained GexSi1-x/Si superlattice

Park, J. S.; Karunasiri, R. P. G.; Wang, K. L.; Rhee, S. S.; Chern, C. H.
April 1989
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1564
Academic Journal
The hole transport through the minibands of a GexSi1-x/Si superlattice is observed for the first time. The symmetrically strained, short-period GexSi1-x/Si supperlattice is grown on a Gex/2Si1-x/2 /Si buffer layer. The current-voltage and conductance-voltage characteristics show two peaks which are attributed to the conduction of light holes through the first and second light hole minibands. The light hole miniband energies are estimated by thermionic emission analysis and are in good agreement with the calculated values using effective mass approximation.


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