Silicide/silicon Schottky barriers under hydrostatic pressure

Werner, Jürgen H.
April 1989
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1528
Academic Journal
We investigate several silicide/silicon Schottky barrier heights under hydrostatic pressures up to 10 kbar. The barriers of polycrystalline TiSi2, PtSi, and WTi on n-type Si decrease with -1.l3, -1.35, and -1.42 meV/kbar, respectively. The coefficients for A- and B-type NiSi2/Si amount to -0.77 and -0.89 meV/kbar and are too small to support models which ascribe the l40 meV barrier difference of these two types to different interface bond lengths. The pressure coefficients are, on the other hand, within a range of predictions of Cardona and Christensen which are based on pure bulk properties.


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