TITLE

Excess carrier lifetimes in the silicon doping superlattice

AUTHOR(S)
Leith, G. A.; Zukotynski, S.; Landheer, D.; Denhoff, M. W.; Buchanan, M.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1558
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The excess carrier lifetimes in a silicon doping superlattice were investigated by measuring the decay of both the photovoltage and the photoconductance. The photovoltage decayed exponentially with a time constant of 1 s at liquid-nitrogen temperature. In addition, persistent photoconductivity extending over many hours was observed in the n-type layers.
ACCESSION #
9830803

 

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