TITLE

Photosensitivity of the 714 and 730 cm-1 absorption bands in semi-insulating GaAs: Evidence for a deep donor involving oxygen

AUTHOR(S)
Alt, H. Ch.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1445
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The optically induced metastable interconversion processes of the oxygen-related vibrational modes at 730 and 714 cm-1, bands A and B, have been studied and compared with related properties of the EL2 defect. It is shown that the conversion from A to B is due to a charge exchange with the neutral EL2 level. The reverse process, recovery of band A, is observed after quenching of EL2. Conclusive evidence is presented that the two bands are associated with a donor in the upper half of the band gap. From Hall effect measurements, a trap energy of 0.43 eV below the conduction band is expected. A preliminary calibration of the absorption strength yields defect concentrations of ≊1015 cm-3 in some samples.
ACCESSION #
9830741

 

Related Articles

  • Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy. Schneider, J.; Dischler, B.; Seelewind, H.; Mooney, P. M.; Lagowski, J.; Matsui, M.; Beard, D. R.; Newman, R. C. // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1442 

    Two infrared local vibrational mode (LVM) absorption lines occurring at 715 and 845 cm-1 shift to 679 and 802 cm-1 in gallium arsenide doped with 18O, proving that the lines arise from the vibrations of oxygen impurities. The 715 cm-1 line exhibits a triplet 69,71Ga isotope fine structure...

  • The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi-insulating GaAs. Fischer, D. W.; Manasreh, M. O. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2504 

    Presents a study that investigated the effect of charge state on the local vibrational mode absorption of carbon acceptor in semi-insulating gallium arsenide semiconductors. Methodology; Analysis of the behavior of the far-infrared electronic lines of the samples; Effect of EL2 photoquenching...

  • Erratum: Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescence [Appl. Phys. Lett. 51, 937 (1987)]. Bose, S. S.; Lee, B.; Kim, M. H.; Stillman, G. E. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1288 

    Presents a correction of the error made in the article on epitaxial gallium arsenide semiconductors.

  • Model for degradation of band-gap photoluminescence in GaAs. Guidotti, Daniel; Hovel, Harold J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1411 

    A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence...

  • Local structure around Zn atoms diffused into the GaAs crystal. Kitano, T.; Matsumoto, Y.; Matsui, J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1390 

    We have studied the local structure around Zn atoms diffused into the GaAs crystal using the extended x-ray absorption fine structure method. Although Zn atoms are associated with vacancies at the first nearest neighbor (NN) sites, the first NN distance remains constant even where vacancies...

  • Photorefractive gain in GaAs under a dc electric field. Liu, Duncan T. H.; Cheng, Li-Jen; Rau, Mann-Fu; Wang, Faa-Ching // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1369 

    We report the first observation of a photorefractive gain coefficient as high as 2.6 cm-1 in the undoped liquid-encapsulated Czochralski-grown GaAs crystals at 1.06 μm under a dc electric field of 13 kV/cm without using the moving grating technique. The absorption coefficient of the crystals...

  • Optically enhanced photoconductivity in semi-insulating gallium arsenide. Desnica, U. V.; Šantic, B. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p810 

    Time evolution of photoconductivity of semi-insulated gallium arsenide illuminated at low temperatures with monochromatic 0.7–1.8 eV photons was studied. For low light intensity the photosensitivity increases with time by several orders of magnitude and exhibits different dynamics for...

  • Package's material eliminates cracking in GaAs microwave control device. Maliniak, David // Electronic Design;3/4/96, Vol. 44 Issue 5, p42 

    Reports that Mini-Systems Inc. has developed a packaging method for gallium arsenide (GaAs) electronic devices. Problems encountered in the conventional packaging of GaAs devices; Characteristics of the new packaging method.

  • Peculiarities of the Long-Range Effects in GaAs-Based Transistor Structures upon Combined Irradiation with Ions of Various Masses. Obolensky, S. V.; Skupov, V. D. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p54 

    Anomalous distinctions in the depth profiles of charge carrier density in the active regions of GaAsbased structures were observed for samples irradiated from the rear side (through substrate) with molecular hydrogen and argon ions either separately or in a certain combined sequence. The maximum...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics