TITLE

Doped surfaces in one sun, point-contact solar cells

AUTHOR(S)
King, R. R.; Sinton, R. A.; Swanson, R. M.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1460
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3% at 1 sun (0.100 W/cm2), 25 °C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9%, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.
ACCESSION #
9830727

 

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