TITLE

Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer

AUTHOR(S)
Tanaka, T.; Minagawa, S.; Kajimura, T.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1391
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the thickness control of the cladding layer adjacent to light absorbing layers is significantly improved. Results show that the GaAs layer is effective as an etch-stop layer even if the thickness is only 1–2 nm. The total internal loss of the lasers is estimated to be about 20 cm-1 and loss due to the insertion of the GaAs layer is almost negligible. A threshold current of about 50 mA and a stable fundamental transverse mode up to an output power of about 10 mW is attained at room temperature under cw operation. Similar results were obtained when an AlGaAs layer was used instead of GaAs.
ACCESSION #
9830699

 

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