Plasma-enhanced chemical vapor deposited HgTe-CdTe epitaxial superlattices

Williams, L. M.; Lu, P.-Y.; Chu, S. N. G.
April 1989
Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1329
Academic Journal
For the first time, small-period epitaxial superlattices were grown using plasma-enhanced chemical vapor deposition. The superlattices were periods of HgTe-CdTe grown on CdTe substrates at 150 °C using dimethylcadmium, dimethylmercury, and dimethyltelluride. Cross-section transmission electron microscopy shows that layers as thin as 80 Å were obtained.


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