TITLE

Structural properties of ultrathin arsenic-doped layers in silicon

AUTHOR(S)
Denhoff, M. W.; Jackman, T. E.; McCaffrey, J. P.; Jackman, J. A.; Lennard, W. N.; Massoumi, G.
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1332
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have grown δ-doped layers in Si by low-energy As-ion implantation during molecular beam epitaxy. The layers were investigated using cross-sectional transmission electron microscopy, secondary-ion mass spectrometry, Rutherford backscattering, and electrical measurements. The δ-doped layers were between 3.5 and 5.5 nm thick, and showed perfect epitaxy with 50–80% of the incorporated As on substitutional sites. Layers doped at concentrations from 1×1013 cm-2 to 8×1013 cm-2 had bulk-like mobilities and spanned the metal to insulator transition.
ACCESSION #
9830643

 

Related Articles

  • Doping of Si thin films by low-temperature molecular beam epitaxy. Gossmann, H.-J.; Unterwald, F. C.; Luftman, H. S. // Journal of Applied Physics;6/15/1993, Vol. 73 Issue 12, p8237 

    Describes the application of thermal doping of silicon films by molecular beam epitaxy (MBE). Reasons for utilizing ion implantation in doping methods; Information on MBE; Discussion on the abruptness of dopant concentration changes.

  • Laser-induced sputtered neutral mass spectrometry study of arsenic concentration profiles in a.... Higashi, Yasuhiro; Maruo, Tetsuya; Homma, Yoshikazu; Kodate, Jun'ichi; Miyake, Masayasu // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2391 

    Investigates the arsenic concentration profiles in silicon/single-crystal silicon system by sputtered neutral mass spectroscopy. Implantation of arsenic ions in polycrystalline silicon films; Suppression of secondary ion generation; Use of argon as primary ion beam in the ionization process.

  • Conduction mechanism of high-resistivity polycrystalline silicon films. Saito, Yoji; Mizushima, Ichiro; Kuwano, Hiroshi // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2010 

    Investigates the electrical properties of polycrystalline silicon films deposited by low-pressure chemical vapor deposition and doped by boron, phosphorous or arsenic with ion implantation. Conduction mechanism of polycrystalline silicon films; Dependence of the resistivity of the films on the...

  • Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon. Takamura, Y.; Marshall, A. F.; Mehta, A.; Arthur, J.; Griffin, P. B.; Plummer, J. D.; Patel, J. R. // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p3968 

    Ion implantation followed by laser annealing has been used to create supersaturated and electrically active concentrations of antimony in silicon. Upon subsequent thermal annealing, however, these metastable dopants deactivate towards the equilibrium solubility limit. In this work, the formation...

  • Effect of the tilt angle on antimony in silicon implanted wafers. Claudio, G.; Kirkby, K.J.; Bersani, M.; Low, R.; Sealy, B.J.; Gwilliam, R. // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5471 

    A dose of 5.0× 10 14 antimony (S b+) ions cm-2 was implanted into silicon wafers at an energy of 70 keV, at different tilt angles (0°, 15°, 30°, 45°, and 60°). One set of samples was preamorphized with 160 kev germanium (Ge+) ions with a dose of 1× 10 15 cm-2. After...

  • Defect Engineering for Ultra-Shallow Junctions Using Surfaces. Seebauer, E. G.; Kwok, C. T. M.; Vaidyanathan, R.; Kondratenko, Y. V.; Yeong, S. H.; Srinivasan, M. P.; Colombeau, Benjamin; Chan, Lap // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p34 

    Formation of extremely shallow pn junctions with very low electrical resistance is a maj or stumbling block to the continued down scaling of microelectronic devices. Recent work in our laboratory has shown that the behavior of defects within silicon (and therefore dopants) can be changed...

  • Quantitative Evaluation of Ion-implanted Arsenic in Silicon by Instrumental Neutron Activation Analysis. Takatsuka, Toshiko; Hirata, Kouichi; Kobayashi, Yoshinori; Kuroiwa, Takayoshi; Miura, Tsutomu; Matsue, Hideaki // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p194 

    Certified reference materials (CRMs) of shallow arsenic implants in silicon are now under development at the National Metrology Institute of Japan (NMIJ). The amount of ion-implanted arsenic atoms is quantified by Instrumental Neutron Activation Analysis (INAA) using research reactor JRR-3 in...

  • A Comparative Study Of Dopant Activation And Deactivation In Arsenic and Phosphorus Implanted Silicon. Qin, S.; McTeer, Allen; Hu, Jeff Y.; Prussin, S.; Reyes, Jason // AIP Conference Proceedings;1/7/2011, Vol. 1321 Issue 1, p188 

    Comparative As and P beamline implantations were subjected to a series of low, high, low, high anneals and evaluated after each step. Following high temperature anneals, there is an increase in carrier concentration, a decrease in mobility, and an increase in the concentration of mobility...

  • Near-infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells. Sasa, S.; Nakajima, Y.; Nakai, M.; Inoue, M.; Larrabee, D. C.; Kono, J. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5553 

    Intersubband transitions (ISBTs) in narrow InAs/AlSb multiple quantum wells (MQWs) were investigated for well widths, d, ranging from 5 nm down to 1.8 nm with 10, 20, or 60 periods. In order to observe a strong ISBT signal, a heavy silicon doping was made in each InAs quantum well. Delta doping...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics