Stepped-gate-oxide structure—A new approach for speed enhancement in the gate-controlled photodetector

Sun, C. C.; Xu, J. M.
April 1989
Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1335
Academic Journal
In this letter, we report a stepped-gate-oxide structure implemented in the gate-controlled photodetector. The experimental results show that a one-order-of-magnitude enhancement in the response speed can be achieved by the use of such a structure owing to the induced transverse electrical field.


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