Defect structures in laser-fused Si-SiO2 wafers

Geyselaers, M. L.; Haisma, J.; Widdershoven, F. P.; Michielsen, Th. M.; Reader, A. H.
April 1989
Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1311
Academic Journal
A silicon-on-silicon dioxide structure (silicon-on-insulator) produced by combined ‘‘van der Waals’’ bonding and laser fusing has been studied by cross-sectional transmission electron microscopy. Areas in the silicon corresponding to the regions which are locally melted by the laser beam were found to contain a high density of dislocations after fusing. The radius and depth of these defect areas, as observed in the microscope, are compared with a simple analytical model of the laser-induced melting process.


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