TITLE

Formation of planar superlattice states in new grid-inserted quantum well structures

AUTHOR(S)
Tanaka, Masaaki; Sakaki, Hiroyuki
PUB. DATE
April 1989
SOURCE
Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1326
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have prepared by molecular beam epitaxy a new type of planar superlattice (PSL), in which an array of periodically spaced AlAs bars of one monolayer (ML) in thickness is inserted in the middle of a GaAs quantum well. This grid-inserted quantum well (GI–QW) is prepared on a misoriented GaAs substrate of 2° off from (001) axis by depositing 0.5 ML of AlAs during the growth of a usual QW. Photoluminescence excitation spectra are measured at 20 K and have shown a clear dependence on the polarization of the excitation light, reflecting the in-plane anisotropy of electronic structures. The measured ratio of electron–heavy hole (e–hh) and electron–light hole (e–lh) transition peaks has shown the polarization dependence, which is in good agreement with theory; this demonstrates that 0.5 ML of AlAs atoms deposited on atomic terraces have formed a periodic potential as intended and given rise to the PSL states in this novel structure.
ACCESSION #
9830583

 

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