Distinct observation of interwell coupling effect on optical transitions in double quantum wells in an electric field

Tokuda, Yasunori; Kanamoto, Kyozo; Tsukada, Noriaki; Nakayama, Takashi
March 1989
Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1232
Academic Journal
We present results of an experimental study of interwell coupling effects using asymmetric double quantum well structures under electric fields. Data were obtained by means of photocurrent spectroscopy. It was concluded that remarkable variations in both energy and intensity of excitonic transitions, which were observed for the strongly coupled quantum wells, originate from the intersection of two quantized levels in the conduction band.


Related Articles

  • Transformation of the dimensionality of excitonic states in quantum wells with asymmetric barriers in an electric field. Aleshchenko, Yu. A.; Kazakov, I. P.; Kapaev, V. V.; Kopaev, Yu. V. // JETP Letters;2/10/98, Vol. 67 Issue 3, p222 

    A transformation of the dimensionality of excitonic states from 2D to 3D with increasing external electric field is observed in single GaAs/Al[sub x]Ga[sub 1-x]As quantum-well structures with asymmetric barriers. The binding energy of a 2D exciton remains constant over a wide range of variation...

  • Controllable enhancement of excitonic spontaneous emission by quantum confined Stark effect in... Ochi, N.; Shiotani, T. // Applied Physics Letters;6/17/1991, Vol. 58 Issue 24, p2735 

    Demonstrates a controllable enhancement of excitonic spontaneous emission with the tuning of emission wavelength by electric fields applied to gallium arsenide (GaAs) single quantum wells located inside half-wavelengths microcavities at low temperature. Radiation patterns of the spontaneous...

  • Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wells. Shorthose, M. G.; Maciel, A. C.; Ryan, J. F.; Scott, M. D.; Moseley, A.; Davies, J. I.; Riffat, J. R. // Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p493 

    We report the observation of electric field induced exciton energy shifts and photoluminescence quenching in GaInAs/InP multiple quantum wells. We have measured both the photocurrent and photoluminescence spectra from 100 Ã… wells contained with p+- and n+-InP layers in a conventional p-i-n...

  • Effect of an electric field on the scattering of excitons by free carriers in semiconducting... Koh, Tong San; Feng, Yuan-ping // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2704 

    Calculates the effect of an electric field applied along the direction of carrier confinement on the scattering of excitons by free carriers in semiconducting quantum-well structures. Formalism of calculation; Elastic scattering; Ionization cross section.

  • Direct observation for the reduction of exciton binding energy induced by perpendicular electric.... Kejian Luo; Houzhi Zheng; Shijie Xu; Penghua Zhang; Wei Zhang; Xiaoping Yang // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2642 

    Examines the perpendicular electric field effect of the exciton binding energy using step quantum well. Observation of blushift in the exciton peak; Application of photoluminescence spectra at 77 K; Presence of spatially direct to indirect excitation transition.

  • Exciton saturation in electrically biased quantum wells. Fox, A. M.; Miller, D. A. B.; Livescu, G.; Cunningham, J. E.; Henry, J. E.; Jan, W. Y. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2315 

    We have measured the heavy hole excitation saturation intensity in GaAs/AlGaAs quantum wells as a function of applied electric field and AlGaAs barrier design. We find that the saturation intensity increased with increasing applied field, and decreasing barrier thickness or height, because of...

  • Effect of an electric field on the exciton linewidth due to scattering of excitons by ionized... Feng, Yuan-ping; Spector, Harold N. // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4477 

    Presents a study which calculated the effect of an electric field applied along the direction of carrier confinement on the exciton linewidth due to the scattering of excitons by ionized impurities in semiconducting quantum well structures. Contributions of ionized impurities to the linewidth;...

  • Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system. Huang, Y. S.; Qiang, H.; Pollak, Fred H.; Lee, Johnson; Elman, B. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3808 

    Presents a study which utilized electroreflectance spectroscopy to investigate a GaAs/Ga[sub0.77]Al[sub0.23]As coupled double quantum well (CDQW) system as a function of externally applied electric field. Detection of intra- and inter-well exciton transitions; Lineshape consideration for...

  • Improvement in electroabsorption and the effects of parameter variations in the three-step asymmetric coupled quantum well. Susa, Nobuhiko // Journal of Applied Physics;1/15/1993, Vol. 73 Issue 2, p932 

    Presents a study which analyzed exciton binding energies, radiuses, emission energies and oscillator strengths in a three-step asymmetric coupled quantum well as a function of electric field. Brief introduction to quantum-confined Stark effect in conventional square-potential quantum wells;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics