TITLE

Schottky diode and field-effect transistor on InP

AUTHOR(S)
Loualiche, S.; Ginoudi, A.; L’Haridon, H.; Salvi, M.; Le Corre, A.; Lecrosnier, D.; Favennec, P. N.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1238
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Schottky diode has been realized on InP by a special dry surface treatment. The diode reaches a breakdown voltage of 60 V and the reverse current remains at 0.6 μA under 30 V reverse voltage. The best device shows a reverse current of 0.2 nA at 1 V voltage with an ideality factor of 1.54. The Schottky has been used as a gate in the fabrication of field-effect transistors (FETs) on InP by ion implantation and chemical beam epitaxy. The ion-implanted FET with a channel concentration of 2×1017 cm-3 shows a transconductance of 107 mS/mm at room temperature for a 3 μm gate length.
ACCESSION #
9830539

 

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