TITLE

Disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2

AUTHOR(S)
Guido, L. J.; Major, J. S.; Baker, J. E.; Holonyak, N.; Burnham, R. D.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe a convenient method utilizing chemical reduction of SiO2 by Al (from AlxGa1-xAs) to generate Si and O for impurity-induced layer disordering (IILD) of AlxGa1-xAs-GaAs quantum well heterostructures (QWHs). Experimental data show that Si-O diffusion (from SiO2) is an effective source of Si for Si-IILD and of O that compensates the Si donor, thus resulting in higher resistivity layer-disordered crystal. The usefulness of the Si-O IILD source for fabricating low-threshold disorder-defined buried-heterostructure AlxGa1-xAs-GaAs QWH lasers is demonstrated.
ACCESSION #
9830526

 

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