TITLE

Electronic probe measurements of pulsed copper ablation at 248 nm

AUTHOR(S)
von Gutfeld, R. J.; Dreyfus, R. W.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1212
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used a single wire probe to measure time of flight velocities for copper photoablated with a 248 nm pulsed excimer laser. For the range of fluences, 1.6–12 J/cm2, we find copper ion velocities in the range of 1–2×106 cm/s. We have used Langmuir probe theory to determine ion densities and electron temperatures as a function of fluence and target-probe separation. Results are consistent with recent kinetic and photoablated plasma theories.
ACCESSION #
9830502

 

Related Articles

  • Angle-resolved time-of-flight studies on ground-state neutrals formed by near-threshold excimer laser ablation of copper. Kools, J. C. S.; Dieleman, J. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4163 

    Presents a study which measured the angle-resolved velocity distributions of neutral copper atoms created by near-threshold ultraviolet excimer laser ablation of polycrystalline copper foils as a function of the polar desorption angle and laser fluence. Comparison of the shape of angle-resolved...

  • Superconducting (Bi,Pb)-Ca-Sr-Cu-O thin films prepared in situ by laser ablation. Ivanov, Z.; Brorsson, G. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2123 

    Superconducting Bi-Ca-Sr-Cu-O and Bi-Pb-Ca-Sr-Cu-O films were grown in situ by excimer laser ablation from pressed powder and sintered superconducting targets, respectively. The substrate temperature during deposition was found to be important to obtain a maximum transition temperature. Both 110...

  • Effects of beam parameters on excimer laser deposition of YBa2Cu3O7-δ. Muenchausen, R. E.; Hubbard, K. M.; Foltyn, S.; Estler, R. C.; Nogar, N. S.; Jenkins, C. // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p578 

    Broad angular distributions have been observed for XeCl laser ablation plumes used in the deposition of YBa2Cu3O7-δ thin films. Distributions (inferred from film thickness) and film stoichiometry were measured as a function of laser fluence, beam shape, and oxygen pressure. Parallel to the...

  • Empirical photoablation rate model exemplified with the etching of polyphenylquinoxaline. Lazare, Sylvain; Granier, Vincent // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p862 

    A kinetic model of photoablation with the nanosecond pulses of an excimer laser, based on the so-called moving interface, is presented. The rate of the ablating interface is assumed to be v=k(I-It) when the intensity I exceeds the threshold intensity It. The intensity reaching the interface I...

  • Influence of the beam spot size on ablation rates in pulsed-laser processing. Eyett, M.; Bäuerle, D. // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2054 

    Ablation rates in pulsed-laser processing depend heavily on the laser beam spot size. This has been observed for the first time for a number of different materials. Detailed investigations on this effect, performed by means of XeCl excimer-laser radiation and the example of LiNbO3, are reported...

  • Periodic morphological modification developed on the surface of polyethersulfone by XeCl excimer laser photoablation. Niino, Hiroyuki; Nakano, Masashi; Nagano, Shozaburo; Yabe, Akira; Miki, Tetsuro // Applied Physics Letters;7/31/1989, Vol. 55 Issue 5, p510 

    Periodic and stable micropatterns appeared on the surface of amorphous polyethersulfone etched with an excimer laser at 308 nm in ambient air and a vacuum. The control of such radiative conditions as fluence and incident angle enables us to modify the spacing and pattern of the microstructures....

  • Laser photoablation processes in organosilane thin films. Marinero, E. E.; Miller, R. D. // Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1041 

    We report on the excimer laser-induced photoablation of some organosilane polymers utilizing quartz microbalance techniques to monitor the nature of the ablation phenomenon. A fluence threshold for the ablation process is identified beyond which the material removal rate depends nonlinearly on...

  • XeCl excimer laser ablation of a polyethersulfone film: Dependence of periodic microstructures on a polarized beam. Niino, Hiroyuki; Shimoyama, Masashi; Yabe, Akira // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2368 

    Highly periodic stable microstructures appeared on the surface of polyethersulfone (PES) by XeCl excimer laser ablation with a single polarized beam in ambient air. Its formation mechanism was investigated using the time-resolved light scattering technique with the pulsed light of an XeF excimer...

  • Switching from photochemical to photothermal mechanism in laser ablation of benzene solutions. Hatanaka, Koji; Kawao, Mitsushi; Tsuboi, Yasuyuki; Fukumura, Hiroshi; Masuhara, Hiroshi // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5799 

    Investigates the nanosecond KrF excimer laser ablation of benzyl chloride, benzyl alcohol, toluene, ethylbenzene and n-propylbenzene diluted in n-hexane, n-heptane, dichloromethane and 1,2-dichloroethane. Correlation of ablation threshold values for solutions to photochemical reactivity of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics