Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes

Reed, M. A.; Frensley, W. R.; Duncan, W. M.; Matyi, R. J.; Seabaugh, A. C.; Tsai, H.-L.
March 1989
Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1256
Academic Journal
A systematic comparison of precisely characterized resonant tunneling structures is presented. A self-consistent band bending calculation is used to model the experimentally observed resonant peak positions. lt is found that the peak positions can be accurately modeled if the nominal characterization parameters are allowed to vary within the measurement accuracy of the characterization. As a result, it is found that the asymmetries in the current-voltage characteristics are solely explainable by tunnel barrier thickness fluctuations.


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