Preparation of TiN films by photochemical vapor deposition

Motojima, Seiji; Mizutani, Hidetoshi
March 1989
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1104
Academic Journal
The TiN films have been prepared by photochemical vapor deposition using a D2 lamp from a gas mixture of TiCl4 -NH3 (or N2) -H2. The deposition temperature of the TiN films was lowered by 50–100 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increased by 35–300% with irradiation.


Related Articles

  • Texture-induced asymmetric reactions in TiN/Al–Cu/TiN. Hong, Q. Z.; Jeng, S. P.; Havemann, R. H.; Tsai, H. L.; Liu, H. Y. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7419 

    Presents information on a study which investigated the thermally induced reactions in TiN/Al-Cu/TiN films. Methods for improving TiN barriers; Sheet resistance of Al-Cu with various TiN cap/barrier combinations; Conclusions.

  • Solid phase epitaxial regrowth of n-GaAs with Ti-Ge-Ni metallization for ohmic contracts. Kim, T.-J.; Krishnamoothy, V. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p208 

    Investigates the correlation between solid-phase interfacial reactions and the development of ohmic contacts. Effects of interfacial phases on ohmic contacts; Characteristics and structural composition profile of thin films; Significance of selected area electron diffraction patterns.

  • TiN[sub x] films with metallic behavior at high N/Ti ratios for better solar control windows. Smith, G.B.; Swift, P.D.; Bendavid, A. // Applied Physics Letters;8/2/1999, Vol. 75 Issue 5, p630 

    Focuses on the observation of metallic response in titanium nitride thin films using cathodic arc deposition with 700 eV nitrogen ion assistance. Occurrence of defects exclusively on Ti vacancies; Role of the defects in enhancing optical changes; Changes resulting from shift in onset of Drude...

  • Wet oxidation of Ti...Si...N... Kacsich, T.; Gasser, S. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1871 

    Presents information on a study which investigated the wet oxidation of magnetron-sputtered x-ray amorphous titanium compound thin films by backscattering spectrometry, x-ray diffraction analysis and step profilometry. Experimental details; Results and discussion; Conclusions.

  • TiCn: A new chemical vapor deposited contact barrier metallization for submicron devices. Eizenberg, M.; Littau, K. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2416 

    Describes the production of high-quality chemical vapor deposited TiCN films in a single wafer reactor using a metallorganic precursor. Possession of excellent step coverage over high aspect-ratio contacts; Reason for the achievement of the properties; Display of barrier properties against Al...

  • Temperature effects on the resistivity of polycrystalline silicon titanium salicide. Naem, A. A.; Deen, J.; Chee, L. Y. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1071 

    Reports on the characterization of the heating effects on the resistance of titanium salicide films formed on doped polycrystalline silicon materials. Expression for the temperature coefficient of resistivity; Device experimental preparations; Results and discussion.

  • Impurity-induced 900 °C (2×2) surface reconstruction of SrTiO3(100). Andersen, Jens E. T.; Mo\ller, Preben J. // Applied Physics Letters;5/7/1990, Vol. 56 Issue 19, p1847 

    A p(2×2)surface reconstruction is observed over the 800–900 °C range for SrTiO3 (100), the temperature range which is used in the oxygen anneal of Y, Ba, Cu layers on SrTiO3 (100) substrates in the synthesis of high Tc superconducting thin films. As observed by Auger electron...

  • Formation of a large grain sized TiN layer using TiNx, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection. Byun, Jeong Soo; Rha, Kwan Goo; Kim, Jae Jeong; Kim, Woo Shik; Kim, Hak Nam; Cho, Hae Seok; Kim, Hyeong Joon // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1719 

    Describes a technique for the formation of titanium (Ti)-nitrogen (N) film with large grain size from TiN layer deposited by sputtering in argon and nitrogen. Overview of the film properties and electromigration; Epitaxial continuity at the aluminum/TiN interface; Structural properties of the...

  • Scanning tunneling microscope investigation of the growth morphology of titanium silicide on Si(111) substrates. Stephenson, A. W.; Welland, M. E. // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p5143 

    Details a study which investigated the growth, morphology and surface atomic structure of ultrathin silicide films on silicon substrates. Experimental procedures; Agglomeration of ultrathin titanium silicide; Temperature dependence of crystalline formation; Correlation between silicide...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics