Enhancement of free-carrier concentration in n-type AlxGa1-xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C

Basmaji, P.; Zaouk, A.; Gibart, P.; Gauthier, D.; Portal, J. C.
March 1989
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1121
Academic Journal
AlxGa1-xAs 0.2


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