Dielectric characteristics of fluorinated ultradry SiO2

Nishioka, Yasushiro; Ohji, Yuzuru; Mukai, Kiichiro; Sugano, Takuo; Wang, Yu; Ma, T. P.
March 1989
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1127
Academic Journal
Improvement of dielectric breakdown characteristics and hot-electron-induced interface degradation of metal-oxide-semiconductor capacitors having fluorinated ultradry oxides has been demonstrated. The fluorine is introduced through HF surface treatment of Si prior to oxidation. Secondary-ion mass spectrometry data indicate that SiF distribution is peaked both at the surface of the oxide and at the SiO2/Si interface in the fluorinated ultradry oxide. The possible role of fluorine on the improvement of the dielectric characteristics will be discussed.


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