TITLE

Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

AUTHOR(S)
Yarn, K. F.; Wang, Y. H.; Chang, C. Y.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1157
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A three-terminal n+-i-δp+-i-n+ bipolar–unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.
ACCESSION #
9830425

 

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