High-power and high-speed semi-insulating blocked V-grooved inner-stripe lasers at 1.3 μm wavelength fabricated on p-InP substrates

Horikawa, H.; Wada, H.; Matsui, Y.; Yamada, T.; Ogawa, Y.; Kawai, Y.
March 1989
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1077
Academic Journal
A maximum cw power of 90 mW at 25 °C was obtained for a GaInAsP/InP laser with a semi-insulating InP current blocking layer grown by metalorganic vapor phase epitaxy on a p-type InP substrate, a 700-μm-long cavity, and an antireflection coating on the front facet. The 3 dB bandwidth was in excess of 6 GHz with a low parasitic capacitance of 15 pF despite the long cavity. The semi-insulating layer with the resistivity of 5×107 Ω cm was formed by doping only Fe. The current blocking characteristics of the blocking layer with the same configuration as the lasers were examined under various temperatures.


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