Suppression of DX centers in GaAlAs-GaAs heterostructures

Bourgoin, J. C.; Feng, S. L.; Stiévenard, D.; Letartre, X.; Barbier, E.; Hirtz, J. P.
March 1989
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1115
Academic Journal
Using deep level transient spectroscopy we have studied the DX center in a series of periodic GaAs/GaAlAs uniformly Si doped structures. The presence of the DX center is only detected when the structures do not exhibit superlattice behavior. This is understood by the fact that either the DX associated level is resonant in the first conduction miniband (or above it) or that it does not exist because the original band structure of GaAlAs is destroyed by electron delocalization. Examination of the variation of the concentration of DX centers in periodic planar doped GaAlAs structures shows that this disappearance is due to a band structure effect, thus demonstrating that the DX center originates from a shallow-deep instability of the L-band effective mass state of the Si impurity due to intervalley mixing.


Related Articles

  • Comment on ‘‘New evidence of small lattice relaxation for the DX center in AlxGa1-xAs’’ [Appl. Phys. Lett. 51, 1358 (1987)]. Yu, Peter Y.; Li, Ming-fu // Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1645 

    Deep level transient spectroscopy has been performed on the DX center in the Ga0.65Al0.35As:Te as a function of pressure. The lattice relaxation we observed showed that the results of Talwar et al. (small lattice relaxation) are inconsistent and inconclusive. Our results significantly weaken...

  • Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1-xAs of low Al content. Mooney, P. M.; Theis, T. N.; Wright, S. L. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2546 

    We report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1-xAs of very low Al content. For the first time, discrete emission rates corresponding to different local configurations of Ga and Al atoms around the...

  • Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the.... Ming-fu Li; Yu, Peter Y.; Weber, E.R. // Applied Physics Letters;9/2/1991, Vol. 59 Issue 10, p1197 

    Examines the effect of uniaxial stress on deep level transient spectroscopy of the DX center in aluminum gallium arsenide alloys. Properties of deep centers (DC) in semiconductors; Importance of lattice distortion (LD) in semiconductors; Symmetry of LD in a DC.

  • Observation and characterization of deep donor centers (DX centers) in Si-doped AlAs. Kasu, Makoto; Fujita, Shizuo; Sasaki, Akio // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3042 

    Reports on the observation and characterization of deep donor centers (DX centers) in silicon-doped aluminum arsenide. Carrier concentration in the DX centers revealed by deep level transient spectroscopy; Properties of the DX center in silicon-doped aluminum arsenide; Band diagram of sample...

  • Depletion width and capacitance transient formulas for deep traps of high concentration. Look, D. C.; Sizelove, J. R. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2848 

    Discusses expressions for the depletion width and capacitance transient applicable to traps which may be deep and of high concentration. Use of deep level transient spectroscopy; Depletion-approximation solution to the Poisson equation; Difference between the free-carrier depletion with and the...

  • Deep-level transient spectroscopy study of n-type GaAs epitaxial layers grown by close-spaced vapor transport. Massé, G.; Lacroix, J. M.; Lawrence, M. F. // Journal of Applied Physics;2/1/1989, Vol. 65 Issue 3, p1126 

    Deals with a study focused on a deep-level transient spectroscopy of deep donor traps existing in n-type gallium arsenide epitaxial layers grown by close-spaced vapor transport. Traps seen in other samples in addition to ELCS1; Information on the close-spaced vapor transport technique; Step...

  • Forward bias induced annealing of the E center in silicon. Barnes, C. E.; Samara, G. A. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p934 

    It has been well established that the annealing of the E center (phosphorus vacancy) in Si is charge state dependent with the recovery proceeding more rapidly in the neutral charge state than in the negative state. Herein, we report for the first time a third annealing condition with a strongly...

  • Nature of Ec-0.37 eV centers and the formation of high-resistivity layers in n-type silicon. Naumova, O. V.; Smirnov, L. S.; Stas’, V. F. // Semiconductors;Aug97, Vol. 31 Issue 8, p847 

    The DLTS and Van der Pauw methods are used to investigate the production of E[sub c] - 0.37 eV centers responsible for the formation of high-resistivity layers in n-type Si irradiated with electrons and annealed in the temperature range 80-320 °C. An analysis of the experimental data leads to...

  • Configurationally multistable defect in silicon. Chantre, A.; Kimerling, L. C. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1000 

    We report the isolation of a new defect in n-type silicon following room-temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority-carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus-vacancy pair hides a signal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics