TITLE

One-dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wires

AUTHOR(S)
Ismail, K.; Antoniadis, D. A.; Smith, Henry I.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1130
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Devices consisting of 100 parallel, modulation-doped GaAs/AlGaAs wires, each about 40 nm wide, have been fabricated and tested at 4.2 and 77 K. The wires were created by ion milling a shallow grating into the doped AlGaAs layer. The mask for etching the grating was produced by x-ray nanolithography, and lift-off of Ti/Au. The grating period was 200 nm and the linewidth about 85 nm. Backgate bias or illumination was used to modulate the charge density in the wires. Conductance measurements at 4.2 K provide clear evidence of quasi-one-dimensional density of states. A corresponding modulation of the electron mobility, above and below values in the two-dimensional system, was observed.
ACCESSION #
9830383

 

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