TITLE

Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

AUTHOR(S)
Murota, Junichi; Nakamura, Naoto; Kato, Manabu; Mikoshiba, Nobuo; Ohmi, Tadahiro
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1007
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO2 using ultraclean SiH4 and H2 gases in the temperature range 600–850 °C under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on SiO2 was found, and low-temperature Si selective deposition and epitaxy on Si were achieved without addition of HCl under deposition conditions where only nonselective polycrystalline Si growth could be obtained in conventional CVD systems.
ACCESSION #
9830350

 

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