Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

Murota, Junichi; Nakamura, Naoto; Kato, Manabu; Mikoshiba, Nobuo; Ohmi, Tadahiro
March 1989
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1007
Academic Journal
An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO2 using ultraclean SiH4 and H2 gases in the temperature range 600–850 °C under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on SiO2 was found, and low-temperature Si selective deposition and epitaxy on Si were achieved without addition of HCl under deposition conditions where only nonselective polycrystalline Si growth could be obtained in conventional CVD systems.


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