Observation of multiple silicon dangling bond configurations in silicon nitride

Jousse, D.; Kanicki, J.; Stathis, J. H.
March 1989
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1043
Academic Journal
We show that silicon dangling bonds with different nearest-neighbor configurations and energy levels can be resolved by electron spin resonance (ESR) in silicon nitride. Using an in situ bias technique on large-area metal-nitride-silicon structures, we demonstrate that the ESR line in Si-rich nitride consists of an inhomogeneous distribution of discrete components at different g values. We show that trapping of holes occurs at a site with a g value of 2.0052 corresponding to a pure Si environment, while electron trapping occurs at a site with a g value of 2.0028, corresponding to a pure N environment.


Related Articles

  • Study of dangling bonds in nanometer-sized granulet silicon nitride by electron-spin resonance. Wang, Tao; Zhang, Lide; Fan, Xiaojun; Hu, Jitong; Mo, Jimei // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6313 

    Presents a study which examined the dangling bonds in pellets made by compacting nanometer-sized silicon nitride (NASN) grains using electron-spin resonance (ESR). Experimental procedures; Description of the derivative curves of ESR absorption for the samples; Formation of the dangling bonds in...

  • Low-temperature electron spin resonance investigations of silicon paramagnetic defects in... Warren, W.L.; Rong, F.C.; Poindexter, E.H.; Kanicki, J.; Gerardi, G.J. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2417 

    Focuses on low-temperature electron spin resonance investigations of silicon paramagnetic defects in silicon nitride. Detection of defect centers; Observation of two silicon dangling bond defects; Presence of a single silicon paramagnetic center responsible for charge trapping.

  • A new portrayal of electron and hole traps in amorphous silicon nitride. Kamigaki, Yoshiaki; Minami, Shin-ichi; Kato, Hisayuki // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2211 

    Studies the role of electron and hole traps in amorphous silicon nitride. Information on the electron-spin-resonance measurements; Memory evaluations of metal-nitride-oxide-silicon nonvolatile memory devices; Interface between silicon cluster and amorphous silicon nitride.

  • Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride. Jousse, D.; Kanicki, J.; Krick, D. T.; Lenahan, P. M. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p445 

    Silicon nitride films with low defect densities can be prepared by plasma-enhanced chemical vapor deposition with ammonia-to-silane ratios adjusted to obtain N-rich materials. An electron-spin-resonance signal with g value close to 2.002 is reported for such materials, and the defect is...

  • Electron spin resonance and photoluminescence in pyrolytic silicon nitride films irradiated with argon and molecular ions. Demidov, E. S.; Dobychin, N. A.; Karzanov, V. V.; Marychev, M. O.; Sdobnyakov, V. V. // Semiconductors;Jul2009, Vol. 43 Issue 7, p929 

    The photoluminescence and electron spin resonance phenomena are studied at room temperature for pyrolytic silicon nitride films irradiated with argon ions or molecular nitrogen ions and annealed at temperatures in the range 500–1100°C. The absorption spectrum suggests that the broad...

  • Investigation of the light-induced effects in nitrogen-rich silicon nitride films. Jousse, D.; Kanicki, J. // Applied Physics Letters;9/11/1989, Vol. 55 Issue 11, p1112 

    We report the first observations of photoconductivity fatigue and generation of positive fixed charges under ultraviolet illumination in gate-quality nitrogen-rich silicon nitride films, using metal-nitride-silicon and metal-nitride-oxide-silicon structures. The photoconductivity fatigue is...

  • Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films. Warren, W. L.; Lenahan, P. M.; Kanicki, J. // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2220 

    Presents a study which investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited silicon nitride films using electron spin...

  • Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study. Krick, D. T.; Lenahan, P. M.; Kanicki, J. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3558 

    Deals with a study which demonstrated that ultraviolet illumination annihilates space charge and creates stable paramagnetic centers in silicon nitride. Role of silicon nitride in the microelectronics industry; Devices in which silicon nitride is used; Factor that plays an important role in...

  • Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films. Warren, W. L.; Kanicki, J.; Robertson, J.; Poindexter, E. H.; McWhorter, P. J. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4034 

    Presents a study which explored the nature of the silicon dangling-bond center in amorphous hydrogenated silicon nitride thin films and its relationship to the charge trapping centers using electron paramagnetic resonance (EPR) and capacitance-voltage measurements. Relationship between the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics