TITLE

Observation of multiple silicon dangling bond configurations in silicon nitride

AUTHOR(S)
Jousse, D.; Kanicki, J.; Stathis, J. H.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1043
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We show that silicon dangling bonds with different nearest-neighbor configurations and energy levels can be resolved by electron spin resonance (ESR) in silicon nitride. Using an in situ bias technique on large-area metal-nitride-silicon structures, we demonstrate that the ESR line in Si-rich nitride consists of an inhomogeneous distribution of discrete components at different g values. We show that trapping of holes occurs at a site with a g value of 2.0052 corresponding to a pure Si environment, while electron trapping occurs at a site with a g value of 2.0028, corresponding to a pure N environment.
ACCESSION #
9830326

 

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