Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping

Suemune, I.; Yamada, K.; Masato, H.; Kan, Y.; Yamanishi, M.
March 1989
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p981
Academic Journal
Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have population inversion sufficient for lasing. The possibility of lasing at the higher temperature is briefly discussed.


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