TITLE

GaAs growth properties on V-grooved Si substrates

AUTHOR(S)
Hashimoto, A.; Fukunaga, T.; Watanabe, N.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p998
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs growth properties and first successful maskless selective growth on the etched groove Si substrates are reported. No crystal growth occurs on the {111} Si sidewalls of the V grooves, and the GaAs layers grow only on the {100} planes. The cross-sectional shapes of the selective grown layer depend on the direction of the V grooves. The selectivity also remains even in Al0.3Ga0.7As-grown layers. The selective growth mechanisms are discussed.
ACCESSION #
9830289

 

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