Molecular beam epitaxial growth and characterization of InSb on Si

Chyi, J.-I.; Biswas, D.; Iyer, S. V.; Kumar, N. S.; Morkoç, H.; Bean, R.; Zanio, K.; Lee, H.-Y.; Chen, Haydn
March 1989
Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1016
Academic Journal
Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and 2.7×1016 cm-3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×1016 cm-3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.


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