Formation of an interfacial AlN layer in an Al/Si3N4 thin-film system

Brener, R.; Edelman, F.; Gutmanas, E. Y.
March 1989
Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p901
Academic Journal
The formation of an interfacial AlN layer was observed in an Al/Si3 N4 thin-film system immediately after electron beam deposition of Al, employing Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. Heat treatments up to 600 °C resulted in growth of this layer. The Si liberated by the direct reaction between Al and Si3 N4 was found to crystallize into small islands of peculiar fractal-like shape. The AlN layer acted as a diffusion barrier for diffusion of Al into Si3 N4 .


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