Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3

Asano, A.; Sakai, H.
March 1989
Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p904
Academic Journal
Wide optical gap (2.0 eV) boron-doped hydrogenated amorphous silicon carbide films were prepared by the plasma-assisted chemical vapor deposition technique from a SiH4+CH4+BF3+H2 gas mixture for the first time. The film showed a photoconductivity of 1×10-5 S/cm under 1 sun illumination, which was higher by a factor of 5 than the films doped with B2H6.


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