Ion beam enhanced diffusion of B during Si molecular beam epitaxy

Pukite, P. R.; Iyer, S. S.; Scilla, G. J.
March 1989
Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p916
Academic Journal
Enhanced diffusion of B is observed during the growth of ion bombarded epitaxial layers by Si molecular beam epitaxy. Ion-assisted methods are generally required for high levels of n-type doping, and we find that the damage caused by the low-level ion bombardment is responsible for the enhanced diffusion of B. Furthermore, the concentration profiles of as-grown and post-growth annealed samples show that the diffusion is a transient effect that occurs at the growth temperature of 600–700 °C. Simulation of the diffusion process demonstrates that nearly all of the B is participating in the diffusion and that the built-in electric field at the p-n junction leads to a further smearing of the B profile.


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