TITLE

Nonrandom doping and elastic scattering of carriers in semiconductors

AUTHOR(S)
Levi, A. F. J.; McCall, S. L.; Platzman, P. M.
PUB. DATE
March 1989
SOURCE
Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p940
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-density delta doping of semiconductors may result in partial ordering of dopant atoms. Under suitable circumstances, periodic delta doping leads to significant suppression of elastic scattering and a consequent enhancement in charge carrier mobility.
ACCESSION #
9830228

 

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