Persistent photoquenching and anion antisite defects in neutron-irradiated GaAs

Goltzene, A.; Meyer, B.; Schwab, C.
March 1989
Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p907
Academic Journal
A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Ga centers as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As4+Ga centers can be split into two subsets.


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