Grain boundary amorphization reaction in thin films of elemental Cu and Y

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.
February 1989
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p795
Academic Journal
Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh vacuum dc ion beam deposition chamber. Room-temperature growth of an amorphous Cu-Y phase was observed with interdiffusion of the elemental Cu and Y. Transmission electron microscopy of as-prepared samples revealed a novel growth morphology; amorphous phase formation was observed both at the original Cu/Y interface and between the grains of the elemental Y. Estimates for the thermodynamic and kinetic factors underlying the grain boundary amorphization reaction are presented.


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