TITLE

New mechanism for diffusion of ion-implanted boron in Si at high concentration

AUTHOR(S)
Holland, O. W.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p798
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Modeling of the diffusion of high-concentration implanted B in Si is done. The normally accepted model, which assumes that diffusivity of boron is controlled by the singly charged donor vacancy, is shown to be inadequate in describing the boron profiles. Rather, a two-stream model, in which boron movement is dominated by a dissociative process involving both interstitial and substitutional diffusion, is found to be in good agreement with the data.
ACCESSION #
9830155

 

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