New mechanism for diffusion of ion-implanted boron in Si at high concentration

Holland, O. W.
February 1989
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p798
Academic Journal
Modeling of the diffusion of high-concentration implanted B in Si is done. The normally accepted model, which assumes that diffusivity of boron is controlled by the singly charged donor vacancy, is shown to be inadequate in describing the boron profiles. Rather, a two-stream model, in which boron movement is dominated by a dissociative process involving both interstitial and substitutional diffusion, is found to be in good agreement with the data.


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