TITLE

High-field transport in GaAs transistors

AUTHOR(S)
Berthold, K.; Levi, A. F. J.; Walker, J.; Malik, R. J.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p813
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Resonant tunneling is used to explore the dynamics of electron transport in the electric field of reverse-biased GaAs n-p-n heterojunction bipolar transistor collectors. Extreme velocity overshoot is observed in a fraction of a percent of electrons which are accelerated ballistically in the Γ valley to energies greater than 1.5 eV. In addition, we show that Γ–X valley transfer is the dominant scattering mechanism for high-energy Γ valley electrons.
ACCESSION #
9830144

 

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