TITLE

Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In-doped substrates

AUTHOR(S)
Imai, Tetsuji; Fuke, Shunro; Mori, Katsumi; Kuwahara, Kazuhiro
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p816
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Undoped and Zn-doped (∼3×1020/cm3) GaAs epilayers are grown on In-doped (order of 1020/cm3) GaAs substrates by the organometallic vapor phase epitaxy method. By thermal annealing of the undoped epilayer, changes in the perpendicular lattice constant a⊥, together with the apparent changes in surface morphology such as the appearance of a cross-hatched structure or a narrowing of the cross-hatched line spacing, are observed. It is also found that Zn doping is very effective to obtain thick, coherently grown epilayers on In-doped GaAs substrates. No appreciable changes in a⊥ and no generation of misfit dislocations are found because of the hardening of the crystalline lattice, similar to the case of In doping to GaAs bulk crystals.
ACCESSION #
9830141

 

Related Articles

  • InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region. Tokumitsu, E.; Dentai, A. G.; Joyner, C. H.; Chandrasekhar, S. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2841 

    Sulfur δ doping in InP by metalorganic vapor phase epitaxy is reported. A peak carrier concentration of 7×1017 cm-3 with a full width at half maximum of 30 nm has been measured by the electrochemical capacitance-voltage technique. It is shown that by inserting the δ-doping spike in the...

  • Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells. Fritz, I. J.; Drummond, T. J.; Osbourn, G. C.; Schirber, J. E.; Jones, E. D. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1678 

    We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1-xAs/GaAs with x≊0.2. With modulation doping, 4 K mobilities of ∼3×104 cm2/V s have been achieved. This value is near that attained for electrons in comparable...

  • Monte Carlo investigation of minority-electron transport in In0.53Ga0.47As. Osman, M. A.; Grubin, H. L. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1812 

    The transport of minority electrons in p-type In0.53Ga0.47As has been investigated for 1017 and 5×1017 cm-3 doping levels. Using Monte Carlo methods and including inelastic electron-hole (e-h) scattering, it is found that the mean electron velocity for fields below 4 kV/cm is smaller when...

  • Carbon doping in GaAs layers grown with trimethylgallium and solid arsenic in a mixture of.... Pena-Sierra, R.; Escobosa, A.; Sanchez-R., V.M. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2359 

    Investigates the carbon doping of p-type gallium arsenide epitaxial layers. Deposition of the layer by metalorganic vapor phase epitaxy system using solid arsenic and trimethylgallium; Dependence of carbon incorporation on hydrogen partial pressure; Effect of nitrogen gas introduction into the...

  • Application of the charged point-defect model to diffusion and interdiffusion in GaAs. Cohen, R. M. // Journal of Applied Physics;6/15/1990, Vol. 67 Issue 12, p7268 

    Presents a study that examined the use of a charge point-defect model to describe the diffusion and interdiffusion in gallium arsenide semiconductors. Background on diffusion under standard conditions; Analysis of the diffusion of dopants in the seminconductor; Evaluation of the point-defect...

  • Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer. KOZIC, ANTONI; SU�IEDELIS, ALGIRDAS; PETKUN, VALERIJ; CER�KUS, AURIMAS; SHTRIKMANN, HADAS; GRADAUSKAS, JONAS; KUNDROTAS, JURGIS; A�MONTAS, STEPONAS // Optica Applicata;2005, Vol. 35 Issue 3, p471 

    In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER...

  • Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy. Hamm, R. A.; Panish, M. B.; Nottenburg, R. N.; Chen, Y. K.; Humphrey, D. A. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2586 

    Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be to p=5×1020 cm-3 by growth at substrate temperatures as low as 365 °C. The maximum doping level is strongly growth temperature dependent. Heterostructure bipolar transistors with base doping...

  • Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures. Subashiev, A. V.; Mamaev, Yu. A.; Oskotskii, B. D.; Yashin, Yu. P.; Kalevich, V. K. // Semiconductors;Nov99, Vol. 33 Issue 11, p1182 

    The optical orientation of electron spins in heavily doped, strained GaAs/GaAsP layers with a deformation-split valence band is studied experimentally. The observed polarized luminescence spectra and polarized photoemission (electron emission) spectra are shown to be described well by a model...

  • Energy levels of the Sb[sub Ga] heteroantisite defect in GaAs:Sb. Lagowski, J.; Morawski, A.; Sen, S.; Edelman, P. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2968 

    Examines the transient capacitance of antimony doped bulk gallium arsenide semiconductors. Correlation between energy level and Sb[sub Ga] heteroantisite defect; Factors influencing the levels of electron emission activation energies; Determination of the emission rate signatures.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics