Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s

Sajoto, T.; Santos, M.; Heremans, J. J.; Shayegan, M.; Heiblum, M.; Weckwerth, M. V.; Meirav, U.
February 1989
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p840
Academic Journal
Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature ([bar_over_tilde:_approx._equal_to]4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of [bar_over_tilde:_approx._equal_to]5×1011 cm-2—a factor of four improvement over the highest mobility reported for inverted interfaces.


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