Molecular beam epitaxy growth of CoSi2 at room temperature

Tung, R. T.; Schrey, F.
February 1989
Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p852
Academic Journal
Single-crystal type B CoSi2 thin layers have been grown on Si(111) by codeposition at room temperature. The existence of a good quality CoSi2 template layer on the surface prior to the codeposition is essential. This requirement can be satisfied by either an annealed CoSi2 thin layer or by a small amount of cobalt deposited at room temperature. The topography of the original substrate surface has a predominant effect on the structure of line defects at the CoSi2 interface formed at room temperature. Results obtained from transmission electron microscopy and Rutherford backscattering are presented.


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