TITLE

Ga1-xAlxAs purification during its liquid phase epitaxial growth in the presence of Yb

AUTHOR(S)
Raczynska, J.; Fronc, K.; Langer, J. M.; Lischka, K.; Pesek, A.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p700
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of Yb added to the melt, on the near-band-gap emission of Ga1-xAlxAs grown by liquid phase epitaxy, is reported. No characteristic Yb3+ emission is found, but a pronounced narrowing of the bound-exciton spectrum is observed for Yb concentrations in the Ga melt below 100 ppm. A similar effect is seen in conduction band to acceptor transitions, for which the smallest linewidth observed is limited by fluctuations in composition and agrees well with the currently accepted 66:34 band-offset partition between the conduction and valence bands of GaAs/Ga1-xAlxAs heterojunctions in the direct band-gap range.
ACCESSION #
9830068

 

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